K4R881869D - 256/288Mbit RDRAM(D-die)

Samsung semiconductor

Datasheet Details

Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output..

for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™.

📁 Related Datasheet

📌 All Tags

Samsung semiconductor K4R881869D-like datasheet

K4R881869 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M-NbCcG6 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M-NCK7 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R881869M-NCK8 - 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669A - 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM

K4R881869D Stock/Price